Search for: All records

The solution-processing of metal chalcogenides offers a promising route to improve the manufacturing of semiconductor devices. The amine–thiol solvent system has been deemed an “alkahest” for its ability to dissolve a wide range of metals and metal chalcogenides. Therefore, it enables convenient synthesis of metal sulfides. However, in the literature there are limited reports of analogous selenium-based “alkahest” chemistry. Here we show that solutions containing n-alkylammonium polyselenides can dissolve a wide range of metals and metal compounds through the formation of soluble metal polyselenides. These metal polyselenides can subsequently be utilized as precursors for the synthesis of a wide range of binary and multinary metal selenide thin films and nanoparticles, including Cu(In,Ga)Se2, Cu2ZnSnSe4, and Ag2ZnSnSe4. 

Solution processing of CuInSe 2 /CuInGaSe 2 (CISe/CIGSe) photovoltaic devices via non-hydrazine based routes has been studied for the past few years and a significant improvement in the device performance has been achieved for multiple solvent routes. However, none of these routes have ever reported the fabrication of absorbers with a thickness of above 1.2–1.3 microns which is almost half of what has been traditionally used in vacuum based high efficiency CIGSe devices. The main reason for this limitation is associated with the formation of a fine-grain layer in solution based systems. Here we manipulate the formation of such a fine-grain layer in an amine–thiol based solution route through surface modifications at the bottom Mo interface and achieve an active area efficiency of up to 14.1% for CIGSe devices. Furthermore, with a detailed analysis of the fine-grain layer, not just in the amine–thiol based film, but also in the film fabricated via the dimethylformamide-thiourea route, we identify the reason for the formation of such a fine-grain layer as the presence of the sulfide material and carbon impurity (if any) in the precursor film. We utilize the amine–thiol solvent system's ability for selenium and metal selenide dissolution to manipulate the ink formulations and demonstrate the reduction in the formation of sulfide materials as well as the extent of trapped carbon in the precursor film. With modified precursor films, we then successfully grow CISe/CIGSe thin films of 2-micron thickness with the complete absence of a fine-grain layer through a high temperature, thickness independent bulk growth mechanism making the film morphology similar to the one fabricated using a high efficiency hydrazine based route.